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NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package

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Shenzhen Canyi Technology Co., Ltd.

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NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package

Brand Name : NCE

Model Number : NCE30H10K

Certification : RoHS

Place of Origin : Guangdong, China

MOQ : 2500PCS

Price : usd 0.2/pcs

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 3-5 days

Packaging Details : Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms

Type : NCE N channel MOSFET

Package Type : Surface Mount

Package : TO-252

VDS : 30V

Drain Current-Continuous : 100A

Maximum Power Dissipation : 110W

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AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor

N channel transistor features

VDS =30V,ID =100A
RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability

Mosfet power transistor description

The NCE30H10K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.

NCE30H10K TO-252 application

Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply

Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	V_DS	800	V
Gate-Source Voltage	V_GS	±30	V
Continuous Drain Current	I_D	100	A
Pulsed Drain Current	I_DM	400	A
Maximum Power Dissipation	P_D	110	W
Single pulse avalanche energy (	E_AS	350	mJ
Operating Junction and Storage Temperature Range	T_J,T_STG	-55 To 175	℃

Electrical Characteristics (TA=25°C, unless otherwise noted)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Off Characteristics
Drain-Source Breakdown Voltage	V_{(BR) DSS}	V_GS = 0V, I_D = -250uA	30	-	-	V
Zero Gate Voltage Drain Current	I_DSS	V_D_S = 24V, V_GS = -0V	-	-	1	uA
Gate Body Leakage	I_GSS	V_GS₌±12v,V_D_S= 0V	-	-	±100	nA
On characteristics
Gate Threshold Voltage	V_GS(th)	V_D_S = V_GS ,I_D = 250uA	1	1.6	3	v
Drain-Source On-State Resistance	R_DS(ON)	V_GS=10V, I_D=20A	-	4.0	5.5	mΩ
Forward Transconductance	g_fs	V_D_S= 10V,I_D= 20A	50	-	-	S
Switching Characteristics
Turn-On Delay Time	t_d(on)	V_DD = 15V, I_D=60A V_GS=4.5V,R_GEN=1.8Ω	-	11	-	ns
Turn-On Rise Time	t_r		-	160	-
Turn-Off Delay Time	t_d(off)		-	25	-
Turn-Off Fall Time	t_f		-	60	-
Total Gate Charge	Q_g	V_DS=15V,I_D=30A, V_GS=10V		70		nC
Gate-Source Charge	Q_gs			8.8
Gate-Drain Charge	Q_gd			16.3
Dynamic Characteristics
Input Capacitance	C_iss	V_DS = 25V, V_GS = 0V f = 1 .0MHz		3400		pF
Output Capacitance	C_oss			356
Reverse Transfer Capacitance	C_rss			308
Drain-source diode characteristics
Diode Forward Voltage	V_SD	I_SD=20A,V_GS=0V	-	-	1.2	V
Diode Forward Current	I_S	-	-	-	100	A
Reverse Recovery Time	trr	Tj=25℃,I_sd=60A, di/dt=100A/μs	-	56	-	ns
Reverse Recovery Charge	Q_rr	Tj=25℃,I_sd=60A, di/dt=100A/μs	-	110	-	nC

Product Tags:

NCE N Channel MOSFET

NCE30H10K Surface Mount MOSFET

TO-252 Surface Mount MOSFET

NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package Images

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