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Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

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Shenzhen Canyi Technology Co., Ltd.

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Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

Brand Name : JC

Model Number : OSP55N06-

Certification : RoHS

Place of Origin : Jiangxi, China

MOQ : Negotiable

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Name : N Channel Field Effect Transistor

Drain-Source Voltage : 60V

Gate-Source Voltage-Continuous : ±20V

Drain Current-Continuous（Note 2） : 55A

Drain Current-Single Plused（Note 1） : 200A

Power Dissipation （Note 2) : 130W

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Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

N Channel Field Effect Transistor Features

High input impedance and low level drive
Avalanche energy tested
Improved dv/dt capability,high ruggedness

Absolute Maximum Ratings (Tc=25°C)

Symbol	Parameters	Ratings	Unit
V_DSS	Drain-Source Voltage	60	V
V_GS	Gate-Source Voltage-Continuous	±20	V
I_D	Drain Current-Continuous(Note 2)	55	A
I_DM	Drain Current-Single Plused(Note 1)	200	A
P_D	Power Dissipation (Note 2)	130	W
T_j	Max.Operating junction temperature	150	℃

Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol		Parameters		Min	Typ	Max	Units	Conditions
Static Characteristics
B_VDSS		Drain-Source Breakdown VoltageCurrent (Note 1)		60	--	--	V	I_D=250µA,V_GS=0V,T_J=25°C
V_GS(th)		Gate Threshold Voltage		2.0	--	4.0	V	V_DS=V_GS,I_D=250μA
R_DS(on)		Drain-Source On-Resistance		--	18	22	mΩ	V_GS=10V,I_D=25A
I_GSS		Gate-Body Leakage Current		--	--	±100	nA	V_GS=±20V,V_DS=0
I_DSS		Zero Gate Voltage Drain Current		--	--	1	μA	V_DS=60V,V_GS=0
gfs		Forward Transconductance		15	--	--	S	V_D_S=30V,I_D=25A
Switching Characteristics
T_d(on)		Turn-On Delay Time	--		60	--	ns	V_DS=30V,I_D=25A, R_G=50Ω(Note 2)
T_r		Rise Time	--		185	--	ns
T_d(_off₎		Turn-Off Delay Time	--		75	--	ns
T_f		Fall Time	--		60	--	ns
Q_g		Total Gate Charge	--		39	--	nC	V_DS=48V,V_GS=10V, I_D=50A(Note 2)
Q_gs		Gate-Source Charge	--		9.3	--	nC
Q_gd		Gate-Drain Charge	--		13	--	nC
Dynamic Characteristics
C_iss	Input Capacitance		--		880	--	pF	V_DS=25V,V_GS=0, f=1MHz
C_oss	Output Capacitance		--		430	--	pF
C_rss	Reverse Transfer Capacitance		--		110	--	pF
I_S	Continuous Drain-Source Diode Forward Current(Note 2)		--		--	55	A
V_SD	Diode Forward On-Voltage		--		--	1.4	V	I_S=20A,V_GS=0
R_th(j-c)	Thermal Resistance, Junction to Case		--		--	1.15	℃/W

Our Company

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

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mosfet power transistor

high power transistor

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