N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies

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Shenzhen Canyi Technology Co., Ltd.

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N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies

Name: N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies
Brand: Canyi
Price: 0.1 USD

Brand Name : Canyi

Model Number : 10N60

Certification : RoHS

Place of Origin : Guangdong, China

MOQ : 1000PCS

Price : US$ 0.1-0.19 per unit (Pieces)

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 1000,000,000PCS Per Day

Delivery Time : 3-5 days

Packaging Details : Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms

Name : 10N60 MOSFET

Package Type : TO-220,TO-220F

Type : Field-Effect Transistor

VDSS : 600V

Lead time : 3-5 days

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10N60 600V n channel mosfet field effect transistors for switched mode power supplies

Datasheet:CY-10N60F.pdf

Field effect transistor features:

Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V
Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC)
Fast switching
100% avalanche tested to make sure quality before ship
This 10N60 improved rate of change of voltage over time

Mosfet General Description:

The10N60H N Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology

Absolute Maximum Ratings (Tc=25°C)

Symbol	Parameters	FQPF10N60C	Unit
V_DSS	Drain-Source Voltage	600	V
V_GS	Gate-Source Voltage-Continuous	±30	V
I_D	Drain Current-Continuous	9.5*	A
I_DM	Drain Current-Single Plused	38*	A
P_D	Power Dissipation	50	W
T_j	Max.Operating junction temperature	-55~150	℃

Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol		Parameters		Min	Typ	Max	Units	Conditions
Static Characteristics
B_VDSS		Drain-Source Breakdown VoltageCurrent (Note 1)		600	--	--	V	VGS =0 V, ID =250 µA
V_GS(th)		Gate Threshold Voltage		2.0	--	4.0	V	V_DS=V_GS,I_D=250μA
R_DS(on)		Drain-Source On-Resistance		--	0.6	0.73	Ω	V_GS=10V,I_D=4.75A
I_GSS		Gate-Body Leakage Current		--	--	±100	nA	V_GS=±30V,V_DS=0
I_DSS		Zero Gate Voltage Drain Current		--	--	1	μA	V_DS=600V,V_GS=0
gfs		Forward Transconductance		--	8.0	--	S	V_D_S=40V,I_D=4.75A (Note 4)
Switching Characteristics
T_d(on)		Turn-On Delay Time	--		23	55	ns	V_DS=300V,I_D=9.5A, R_G=25Ω(Note 4)
T_r		Rise Time	--		69	150	ns
T_d(_off₎		Turn-Off Delay Time	--		144	300	ns
T_f		Fall Time	--		77	165	ns
Q_g		Total Gate Charge	--		44	57	nC	V_DS=480V,V_GS=10V, I_D=9.5A(Note 2)
Q_gs		Gate-Source Charge	--		6.7	--	nC
Q_gd		Gate-Drain Charge	--		18.5	--	nC
Dynamic Characteristics
C_iss	Input Capacitance		--		1570	2040	pF	V_DS=25V,V_GS=0, f=1.0MHz
C_oss	Output Capacitance		--		166	215	pF
C_rss	Reverse Transfer Capacitance		--		18	24	pF
I_S	Continuous Drain-Source Diode Forward Current(Note 2)		--		--	9.5	A
V_SD	Diode Forward On-Voltage		--		--	1.4	V	I_S=9.5A,V_GS=0V

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

We are professional Electronic Components at competitive price,located in Shenzhen City,China.
Should you have any inquires or comments,we would be glad to talk in details through skype/email/Wechat/WhatsApp or any way you like.

Contact:Wendy Yan
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933

Product Tags:

mosfet power transistor

high power transistor

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